NEW PRODUCTKODENSHISST553-02LD-SPhoto TransistorSST553-02LD-S is a high sensitivity NPN silicon phototransistor mounted in a clear sidelooking package. It is compact and easy to mount.Dimensions (Unit:mm)Features• Compact• Sidelooking plastic packageApplication• Photointerrupters• Optical detectors• Optical countersMAXIMUM RATINGS (Ta= 25℃)Item Symbol Rating UnitC-E voltage V_CEO 30 VE-C voltage V_ECO 6 VCollector current I_C 40 mACollector power dissipation P_C 100 mWOperating temp.*1 Topr. -40~+105 ℃Storage temp. Tstg. -40~+105 ℃Soldering temp. *2 Tsol. 260 ℃*1. Hot and cold shock test 1000 times, conditions -40℃: 30min~105℃: 30min*2. Lead Soldering Temperature(3mm from case for 5sec)ELECTRO- OPTICAL CHARACTERISTICS (Ta= 25℃)Items Symbol Condition Min. Typ. Max. UnitCollector dark current I_CEO V_CEO=10V - 1 100 nALight current I_L V_CE=5V,E_v=4lx *2 16 - μAC-E saturation voltage Vce(sat) I_C=0.5mA,E_v=2000lx *2 - 0.3 VSwitching speeds Rise time tr V_CC=10V, I_C = 5mA, R_L=100Ω - 3.2 μsecSwitching speeds Fall time tf - 4.8 μsecSpectral sensitivity λ 500~1,050 nmPeak wavelength λp - 880 - nmHalf angle Δθ - ±30 - deg.*2. Irradiance by CIE standard light source A (2856K tungsten lamp)The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications.Oct, 2023