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三菱射頻模塊 RA45H8994M1

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產(chǎn)品型號RA45H8994M1

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產(chǎn)品簡介

RA45H8994M1是45-watt RF的MOSFET放大器模塊12.8-volt移動電臺在向工作在896-941-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管

詳細(xì)介紹

RA45H8994M1是45-watt RF的MOSFET放大器模塊12.8-volt移動電臺在向工作在896-941-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓和柵電壓1 2（VGG1=VGG2=0V）,只有一小漏電流流入下水道和額定輸出信號（Pout=45W）衰減到60 dB.當(dāng)固定i.e. 3.4V,是提供給1,的輸出功率和電壓的漏門當(dāng)前增加?xùn)艠O電壓2增加.輸出功率和漏電流大幅增加門電壓2周圍E HHH（zui低）的條件下，當(dāng)0V柵極電壓1是3.4V.備存的額定輸出功率在變?yōu)榭捎脿顟B(tài)，VGG2是4V（典型值），5V（zui大）.在這一點(diǎn)上，VGG1要保持3.4V在VGG1=3.4V &amp; VGG2=5V,的典型柵極電流0.4mA.該模塊是專為非線性調(diào)頻調(diào)制，但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏目前同門電壓和輸出功率控制與輸入功率.

特征

•增強(qiáng)型MOSFET晶體管（IDD≅0@ VDD=12.8V, VGG1=VGG2=0V）

• Pout&gt;45W,ηT&gt;33%@VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW

•寬帶頻率范圍：896-941MHz

•金屬帽結(jié)構(gòu)的改善使得RF輻射簡單

•低功耗控制電流IGG1+IGG2=0.4mA（typ）@ VGG1=3.4V, VGG2=5V

•模塊尺寸：67 x 18 x 9.9 mm

•線性操作有可能通過設(shè)置靜態(tài)漏目前同門電壓和輸出功率控制與輸入功率

RA45H8994M1：Silicon RF Power Modules RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For RADIO

DESCRIPTION
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt radios that operate in the 896- to 941-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2（VGG1=VGG2=0V）, only a small leakage current flows into the drain and the nominal output signal
（Pout=45W） attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate voltage 2 around 0V （minimum） under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that VGG2 is 4V （typical） and 5V （maximum）.At this point, VGG1 has to be kept in 3.4V.At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.

FEATURES
• Enhancement-Mode MOSFET Transistors（IDD?0 @ VDD=12.8V, VGG1=VGG2=0V）
• Pout>45W, ?T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 896-941MHz
• Metal cap structure that makes the improvements of RF radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA（typ） @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. RoHS COMPLIANCE
• RA45H8994M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER:RA45H8994M1-101

SUPPLY FORM:Antistatic tray,10 modules/tray

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