RD07MVS1是MOS FET型晶體管專為VHF/UHF RF功率放大器應用
特性：高功率增益：Pout>7W, Gp>10dB@Vdd=7.2V,f=520MH*率：60%typ. (175MHz)高效率：55%typ. (520MHz)
描述：RD07MVS1是MOS FET型晶體管專為VHF/UHF RF功率放大器應用
RD07MVS1：Silicon RF Power MOS FET （Discrete） RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION：RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES：High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. （175MHz） High Efficiency: 55%typ. （520MHz）
APPLICATION：For output stage of high power amplifiers in VHF/UHF band radio sets.
RoHS COMPLIANT
RD07MVS1-101, T112 is a RoHS compliant product.RoHS compliance is indicating by the letter “G” after the Lot Marking.This product includes the lead in high melting temperature type solders.However, it is applicable to the following exceptions of RoHS Directions.1.Lead in high melting temperature type solders（i.e.tin-lead solder alloys containing more than85% lead.）
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三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
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特性：高功率增益：Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz高效率：60%typ. （175MHz）高效率：55%typ. （520MHz）
應用：對于輸出的高功率放大器階段VHF/UHF 頻帶移動無線sets
ROHS柔性：RD07MVS1-101,T112是RoHS兼容產(chǎn)品.RoHS遵守表明該地段后由信“G”扣分.該產(chǎn)品包括高熔融高溫型焊料中的鉛.如何以往，它適用于RoHS方向以下情況除外.1.Lead高熔融焊錫（i.e.tin無鉛焊料合金中含有較多的than85%.）
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