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上海尖豐光電技術有限公司


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反射模式激光芯片-激光器件

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更新時間:2020-09-03 23:10:24瀏覽次數:163次

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商鋪產品:403條

所在地區(qū):上海上海市

聯系人:周美玲 (銷售經理)

產品簡介

型號: MC

詳細介紹

BATOP激光芯片1064nm(Microchip)

品牌: BATOP

型號: MC

BATOP GmbH成立于2003年,是一家隸屬于德國耶拿大學的私人創(chuàng)新型公司。BATOP從事的專業(yè)領域包括:低溫分子束外延技術,介質濺射鍍膜,晶圓加工和芯片安裝技術。在過去幾年里, BATOP 已成為一個用于被動鎖模激光器的可飽和吸收體的供應商??娠柡臀债a品集合了各式各樣的不同的器件,從可飽和吸收鏡(SAM?),到可飽和輸出鏡(SOC)和用于透過應用的可飽和吸收體(SA)。迄今為止,可飽和吸收產品已經覆蓋了800nm到2.6μm的常用激光波長范圍。另一個產品系列是用于太赫茲發(fā)射和探測的太赫茲光電導天線(PCA)。BATOP不僅提供單帶隙天線,還包括整合了微透鏡的高能大狹縫交叉天線陣列和整套的太赫茲光譜儀。 太赫茲光電導天線的激發(fā)波長為800nm到1550nm之間。BATOP借助*的研發(fā)能力來不斷提高自己的產品, 我們始終和客戶在一起,好的滿足他們的需求。

產品介紹

MC – 反射模式微芯片(Microchip in reflection mode)

The

  • Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).
  • The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.
  • The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.

Part No.

Delivery time

Description

MC-1064-100ps

1 week

Microchip in reflection mode
λ = 1064 nm, pulse duration ~ 100 ps,
pulse energy ~ 20 nJ, repetition rate 80 kHz - 700 kHz
pump wavelength 808 nm

MC-1064-240ps

1 week

Microchip in reflection mode
λ = 1064 nm, pulse duration ~ 240 ps,
pulse energy ~ 30 nJ, repetition rate 50 kHz - 800 kHz
pump wavelength 808 nm

MCT – 傳輸模式微芯片

  • The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
  • The laser output beam is in the same direction as the pump beam.
  • The laser output is linear polarized.

Part No.

Delivery time

Description

MCT-1064-90ps

1 week

Microchip in transmission mode
λ = 1064 nm, pulse duration ~ 90 ps,
pulse energy ~ 100 nJ, repetition rate 20 kHz - 400 kHz
pump wavelength 808 nm

MCT-1064-220ps

1 week

Microchip in transmission mode
λ = 1064 nm, pulse duration ~ 220 ps,
pulse energy ~ 160 nJ, repetition rate 20 kHz - 400 kHz
pump wavelength 808 nm

Microchip description and applications

The Microchip (MC) consists of a saturable absorber mirror bonded with a Nd:YVO4 laser crystal. The MC can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a pump diode at 808 nm. Possible application areas of this laser radiation are:

  • l ?micromachining
  • l ?light detection and ranging (LIDAR)
  • l ?precision measurements
  • l ?frequency conversion

The main advantage of a laser build with this microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting from the laser threshold.

Microchip parameters
MC-1064-240ps
Optical Pump Parameters
Parameter at T=25°CMin.Typ.Max.
Wavelength806nm808nm810nm
Pump Power70150mW-200mW300mW
Pump Spot Diameter25μm40μm60μm
Fluorescent Lifetime 55μs (2%) 
Pump Absorption @ 808nm93%95%99,5%
Pump Power Density5 kW/cm2 24 kW/cm2*
Lasing performance with 40μm pump spot size at 25°C
Parameter at T=25°CMin.Typ.Max.
Laser Wavelength1064.0nm1064.3nm1064.6nm
Laser Wavelength Drift 23 pm/100mW** 
Beam Waist Diameter60 μm 100 μm
M21.11.31.5
Pulse Energy30 nJ34 nJ38 nJ
Pulse Duration220ps240ps260ps
Differential Efficiency10%15%20%
Laseing Thresold80 mW90 mW100 mW
Polarization Extinction Ratio 100 
frep50 kHz 800 khz
Pav (150mW)6 mW7,6 mW9 mW
Pav (200mW)13 mW14,4 mW16 mW
Dependency of the average output power P on the pump power at 808 nm
Dependency of the repetition rate frep on the pump power at 808 nm
Pulse duration
Pulse spectrum
  • Microchip激光芯片1064nm

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